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hexfet power mosfet notes through are on page 9 features and benefits applications ? synchronous mosfet for high frequency buck converters pqfn 5x6 mm v ds 30 v v gs max 20 v r ds(on) max (@v gs = 10v) 5.0 (@v gs = 4.5v) 7.2 q g typ 15 nc i d (@t c(bottom) = 25c) 25 a m absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v (source bonding technology limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @t c(bottom) = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v w a c max. 21 52 100 20 30 17 82 25 -55 to + 150 3.6 0.029 54 features benefits low thermal resistance to pcb (< 2.3c/w) enable better thermal dissipation low profile (<1.2mm) results in increased power density industry-standard pinout ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, consumer qualification increased reliability

! form quantity IRFH8325TRPBF pqfn 5mm x 6mm tape and reel 4000 irfh8325tr2pbf pqfn 5mm x 6mm tape and reel 400 eol notice # 259 base part number package type standard pack note

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thermal resistance parameter typ. max. units r jc (bottom) junction-to-case ??? 2.3 r jc (top) junction-to-case ??? 34 c/w r ja junction-to-ambient ??? 35 r ja (<10s) junction-to-ambient ??? 22 d s g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? . 0.01 .1 .0 .0 . 1. 1. . .0 1 10 100 100 1 1 . 1. . . . 11 1.1 t d(on) turn-on delay time ??? 12 ??? t r rise time ??? 16 ??? t d(off) turn-off delay time ??? 14 ??? t f fall time ??? 7.1 ??? c iss input capacitance ??? 2487 ??? c oss output capacitance ??? 503 ??? c rss reverse transfer capacitance ??? 204 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 16 24 ns q rr reverse recovery charge ??? 25 38 nc t on forward turn-on time time is dominated by parasitic inductance mosfet symbol na ns a pf nc v ds = 15v ??? v gs = 20v v gs = -20v ??? ??? 100 ??? ??? 25 conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1.0ma v gs = 10v, i d = 20a conditions max. 94 20 ? = 1.0mhz t j = 25c, i f = 20a, v dd = 15v di/dt = 380a/ s t j = 25c, i s = 20a, v gs = 0v showing the integral reverse p-n junction diode. typ. ??? r g =1.8 v ds = 10v, i d = 20a i d = 20a i d = 20a v gs = 0v v ds = 10v v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v v ds = v gs , i d = 50 a a v gs = 4.5v, i d = 16a v gs = 4.5v v ds = 24v, v gs = 0v, t j = 125c m v ds = 24v, v gs = 0v v gs = 10v, v ds = 15v, i d = 20a

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fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.00v 5.00v 4.50v 3.50v 3.00v 2.75v bottom 2.50v 60 s pulse width tj = 25c 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 2.5v vgs top 10v 7.00v 5.00v 4.50v 3.50v 3.00v 2.75v bottom 2.50v 1 2 3 4 5 6 7 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 20a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 1020304050 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v vds= 6v i d = 20a
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fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50 a i d = 250 a i d = 1.0ma i d = 1.0a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 25 50 75 100 i d , d r a i n c u r r e n t ( a ) limited by source bonding technology 0.10 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by rds(on) tc = 25c tj = 150c single pulse 100 sec 1msec 10msec dc limited by source bonding technology
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fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 0 5 10 15 20 v gs, gate -to -source voltage (v) 1 3 5 7 9 11 13 15 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 20a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 400 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 4.9a 9.4a bottom 20a

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fig 16.

for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

+ - + + + - - - ? !" # $ ? ! % &'&& ? # (( ? &'&& ) ! ' 1k vcc dut 0 l s
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pqfn 5x6 outline "e" package details

http://www.irf.com/technical-info/appnotes/an-1154.pdf note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 5x6 outline "e" part marking xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code)
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pqfn 5x6 outline "e" tape and reel reel dimensions note: controlling dimensions in mm std reel quantity is 4000 parts. standard option (qty 4000) min 329.5 20.9 12.8 1.7 97 ref 13 code a b c d e f g max 330.5 21.5 13.5 2.3 99 17.4 14.5 min 12.972 0.823 0.504 0.067 3.819 0.512 max 13.011 0.846 0.532 0.091 3.898 0.571 metric imperial tr1 option (qty 400) imperial min 6.988 0.823 0.520 0.075 2.350 0.512 max 178.5 21.5 13.8 2.3 66 12 14.5 min 177.5 20.9 13.2 1.9 65 ref 13 metric max 7.028 0.846 0.543 0.091 2.598 0.571 $*
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qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 0.47mh, r g = 50 , i as = 20a.
pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material.
calculated continuous current based on maximum allowable junction temperature.
current is limited to 25a by source bonding technology. msl1 (per jedec j-std-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level consumer ?? (per jedec jesd47f ??? guidelines ) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ date comments ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (eol notice #259) ? revision history 12/16/2013

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